HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 41 to 60 of 222
< previous   next >
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleMatys, M.; Stoklas, R.; Blaho, M.; Adamowicz, B.Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition-Applied physics letters-15-Jun-2017
article (author version)Okamoto, Shoma; Sato, Masaki; Sasaki, Kentaro; Kasai, SeiyaDetection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle-metal tip capacitive coupling-Japanese Journal of Applied Physics (JJAP)-Jun-2017
articleKumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, TamotsuPrecise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process-Journal of Applied Physics-14-May-2017
articleKumazaki, Yusuke; Matsumoto, Satoru; Sato, TaketomoPrecise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications-Journal of The Electrochemical Society-12-May-2017
article (author version)Kuroda, Ryota; Kasai, SeiyaImplementation of a noise-coexistence threshold logic architecture on a GaAs-based nanowire FET network-International journal of parallel, emergent and distributed systems-May-2017
articleMatys, M.; Adamowicz, B.Mechanism of yellow luminescence in GaN at room temperature-Journal of Applied Physics-14-Feb-2017
articleMatys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T.On the origin of interface states at oxide/III-nitride heterojunction interfaces-Journal of Applied Physics-14-Dec-2016
articleKaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, TamotsuHighly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates-Applied physics letters-18-Oct-2016
articleYatabe, Zenji; Asubar, Joel T; Hashizume, TamotsuInsulated gate and surface passivation structures for GaN-based power transistors-Journal of Physics D: Applied Physics-7-Sep-2016
articleMatys, M.; Adamowicz, B.; Zytkiewicz, Z. R.; Taube, A.; Kruszka, R.; Piotrowska, A.High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films-Applied physics letters-1-Aug-2016
article (author version)Sano, Eiichi; Akiba, EijiElectrical properties and applications of carbon nanotube composites-International journal of nanotechnology-Jul-2016
articleMatys, M.; Stoklas, R.; Kuzmik, J.; Adamowicz, B.; Yatabe, Z.; Hashizume, T.Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures-Journal of Applied Physics-31-May-2016
article (author version)Kumazaki, Yusuke; Yatabe, Zenji; Sato, TaketomoFormation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching-Japanese Journal of Applied Physics (JJAP)-Apr-2016
article (author version)Shirata, Kento; Inden, Yuki; Kasai, Seiya; Oya, Takahide; Hagiwara, Yosuke; Kaeriyama, Shunichi; Nakamura, HideyukiRobust myoelectric signal detection based on stochastic resonance using multiple-surface-electrode array made of carbon nanotube composite paper-Japanese Journal of Applied Physics(JJAP)-Apr-2016
article (author version)Sato, Masaki; Yin, Xiang; Kuroda, Ryota; Kasai, SeiyaDetection of discrete surface charge dynamics in GaAs-based nanowire through metal-tip-induced current fluctuation-Japanese Journal of Applied Physics(JJAP)-Feb-2016
articleSakita, Shinya; Hara, Shinjiro; Elm, Matthias T.; Klar, Peter J.Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates-Applied Physics Letters-25-Jan-2016
article (author version)Sato, Taketomo; Kumazaki, Yusuke; Kida, Hirofumi; Watanabe, Akio; Yatabe, Zenji; Matsuda, SoichiroLarge photocurrents in GaN porous structures with a redshift of the photoabsorption edge-Semiconductor science and technology-Jan-2016
articleFischer, Martin; Elm, Matthias T.; Kato, Hiroaki; Sakita, Shinya; Hara, Shinjiro; Klar, Peter J.Analysis of magnetic random telegraph noise in individual arrangements of a small number of coupled MnAs nanoclusters-Physical Review B-6-Oct-2015
article (author version)Abe, Yushi; Kuroda, Ryota; Ying, Xiang; Sato, Masaki; Tanaka, Takayuki; Kasai, SeiyaStructural parameter dependence of directed current generation in GaAs nanowire-based electron Brownian ratchet devices-Japanese Journal of Applied Physics(JJAP)-Jun-2015
articleYin, Xiang; Sato, Masaki; Kasai, SeiyaAnalysis on Non-Ideal Nonlinear Characteristics of Graphene-Based Three-Branch Nano-Junction Device-IEICE transactions on electronics-May-2015
Showing results 41 to 60 of 222
< previous   next >

 

Hokkaido University