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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Fujioka, Yoichiro; Nishide, Shinya; Ose, Toyoyuki; Suzuki, Tadaki; Kato, Izumi; Fukuhara, Hideo; Fujioka, Mari; Horiuchi, Kosui; Satoh, Aya O.; Nepal, Prabha; Kashiwagi, Sayaka; Wang, Jing; Horiguchi, Mika; Sato, Yuko; Paudel, Sarad; Nanbo, Asuka; Miyazaki, Tadaaki; Hasegawa, Hideki; Maenaka, Katsumi; Ohba, YusukeA Sialylated Voltage-Dependent Ca2+ Channel Binds Hemagglutinin and Mediates Influenza A Virus Entry into Mammalian Cells-Cell host & microbe-13-Jun-2018
article (author version)Miyazaki, Masaya; Nishihara, Hiroshi; Hasegawa, Hideki; Tashiro, Masato; Wang, Lei; Kimura, Taichi; Tanino, Mishie; Tsuda, Masumi; Tanaka, ShinyaNS1-binding protein abrogates the elevation of cell viability by the influenza A virus NS1 protein in association with CRKL-Biochemical and biophysical research communications-29-Nov-2013
article (author version)Suzuki, Tadaki; Orba, Yasuko; Makino, Yoshinori; Okada, Yuki; Sunden, Yuji; Hasegawa, Hideki; Hall, William W.; Sawa, HirofumiViroporin activity of the JC polyomavirus is regulated by interactions with the adaptor protein complex 3-Proceedings of the National Academy of Sciences of the United States of America-12-Nov-2013
article (author version)Kawaguchi, Akira; Suzuki, Tadaki; Kimura, Takashi; Sakai, Naoki; Ayabe, Tokiyoshi; Sawa, Hirofumi; Hasegawa, HidekiFunctional analysis of an α-helical antimicrobial peptide derived from a novel mouse defensin-like gene-Biochemical and Biophysical Research Communications-6-Aug-2010
article (author version)Akazawa, Masamichi; Hasegawa, HidekiHigh-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers-Applied Surface Science-15-Jul-2010
articleHasegawa, Hideki; Akazawa, MasamichiHydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering-Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures-Jul-2007
articleAkazawa, Masamichi; Hasegawa, HidekiFormation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics-Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures-Jul-2007
article (author version)Akazawa, Masamichi; Hasegawa, HidekiMBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices-Journal of Crystal Growth-Apr-2007
article (author version)Hasegawa, HidekiControl of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures-Current Applied Physics-Mar-2007
articleSato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki; Hashizume, TamotsuSelective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-26-Jul-2006
articleKokawa, Takuya; Sato, Taketomo; Hasegawa, Hideki; Hashizume, TamotsuLiquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-25-Jul-2006
articleKotani, Junji; Kaneko, Masamitsu; Hasegawa, Hideki; Hashizume, TamotsuLarge reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-Jul-2006
article (author version)Sato, Taketomo; Fujino, Toshiyuki; Hasegawa, HidekiSelf-assembled formation of uniform InP nanopore arrays by electrochemical anodization in HCl based electrolyte-Applied Surface Science-30-May-2006
article (author version)Shiozaki, Nanako; Sato, Taketomo; Akazawa, Masamichi; Hasegawa, HidekiPrecisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices-Journal de Physique IV-Mar-2006
article (author version)Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, TamotsuProperties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits-Journal of Physics: Conference Series-2006
articleSato, Taketomo; Tamai, Isao; Hasegawa, HidekiGrowth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
articleShiozaki, Nanako; Sato, Taketomo; Hasegawa, HidekiEffects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
bookchapter (author version)Yumoto, Miki; Kasai, Seiya; Hasegawa, HidekiSpeed-Power Performances of Quantum Wire Switches Controlled by Nanometer-Scale Schottky Wrap Gates for GaAs based Hexagonal BDD Quantum LSIs---15-Jun-2005
article (author version)Hasegawa, Hideki; Sato, TaketomoElectrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures-Electrochimica Acta-20-May-2005
article (author version)Sato, Taketomo; Oikawa, Takeshi; Hasegawa, HidekiGrowth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
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