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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleShimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, JunichiFabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment-Applied Physics Express (APEX)-1-Nov-2021
articleAkamatsu, Tomoya; Tomioka, Katsuhiro; Motohisa, JunichiDemonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs-Nanotechnology-25-Sep-2020
articleTomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi; Fukui, TakashiInGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor-Applied physics letters-21-Sep-2020
articleTomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiRational synthesis of atomically thin quantum structures in nanowires based on nucleation processes-Scientific reports-1-Jul-2020
articleChiba, Kohei; Tomioka, Katsuhiro; Yoshida, Akinobu; Motohisa, JunichiComposition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform-AIP Advances-Dec-2017
article (author version)Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, JunichiGrowth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy-Journal of Crystal Growth-15-Apr-2017
article (author version)Shougo, Yanase; Hirotaka, Sasakura; Shinjiro, Hara; Junichi, MotohisaSingle-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires-Japanese Journal of Applied Physics-17-Feb-2017
article (author version)Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiGrowth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures-Japanese Journal of Applied Physics-Jan-2017
articleTomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiRecent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology-ECS Transactions-Oct-2016
articleYoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Chiba, Kohei; Motohisa, JunichiSelective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications-ECS Transactions-Oct-2016
proceedings (author version)Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, TakashiAdvances in Steep-Slope Tunnel FETs---Sep-2016
article (author version)Hayashida, Atsushi; Sato, Takuya; Hara, Shinjiro; Motohisa, Junichi; Hiruma, Kenji; Fukui, TakashiFabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires-Journal of Crystal Growth-1-Dec-2010
articleDorenbos, S. N.; Sasakura, H.; van Kouwen, M. P.; Akopian, N.; Adachi, S.; Namekata, N.; Jo, M.; Motohisa, J.; Kobayashi, Y.; Tomioka, K.; Fukui, T.; Inoue, S.; Kumano, H.; Natarajan, C. M.; Hadfield, R. H.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V.; Suemune, I.Position controlled nanowires for infrared single photon emission-Applied Physics Letters-25-Oct-2010
articlePal, B.; Goto, K.; Ikezawa, M.; Masumoto, Y.; Mohan, P.; Motohisa, J.; Fukui, T.Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires-Applied Physics Letters-Aug-2008
articleHua, Bin; Motohisa, Junichi; Ding, Ying; Hara, Shinjiroh; Fukui, TakashiCharacterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy-Applied Physics Letters-24-Sep-2007
articleNataraj, Devaraj; Ooike, Noboru; Motohisa, Junichi; Fukui, TakashiFabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy-Applied Physics Letters-7-Nov-2005
articleNoborisaka, J.; Motohisa, J.; Hara, S.; Fukui, T.Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy-Applied Physics Letters-29-Aug-2005
articleMiyoshi, Yoshihito; Nakajima, Fumito; Motohisa, Junichi; Fukuia, TakashiA 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy-Applied Physics Letters-18-Jul-2005
articleNoborisaka, Jinichiro; Motohisa, Junichi; Fukui, TakashiCatalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy-Applied Physics Letters-23-May-2005
article (author version)Motohisa, J.; Noborisaka, J.; Takeda, J.; Inari, M.; Fukui, T.Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates-Journal of Crystal Growth-10-Dec-2004
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