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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 20 of 33
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Kunimoto, Taiga; Obara, Shizuka; Hara, Shinjiro; Motohisa, Junichi | Generation of cylindrical vector beam from GaAs/InGaAs/GaAs core-multishell nanowire cavity | - | Japanese Journal of Applied Physics (JJAP) | - | 17-Feb-2023 |
| article | Yoshida, Akinobu; Gamo, Hironori; Motohisa, Junichi; Tomioka, Katsuhiro | Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium | - | Scientific reports | - | 31-Jan-2022 |
| article | Shimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, Junichi | Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment | - | Applied Physics Express (APEX) | - | 1-Nov-2021 |
| article | Akamatsu, Tomoya; Tomioka, Katsuhiro; Motohisa, Junichi | Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs | - | Nanotechnology | - | 25-Sep-2020 |
| article | Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi; Fukui, Takashi | InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor | - | Applied physics letters | - | 21-Sep-2020 |
| article | Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes | - | Scientific reports | - | 1-Jul-2020 |
| article | Chiba, Kohei; Tomioka, Katsuhiro; Yoshida, Akinobu; Motohisa, Junichi | Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform | - | AIP Advances | - | Dec-2017 |
| article (author version) | Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi | Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy | - | Journal of Crystal Growth | - | 15-Apr-2017 |
| article (author version) | Shougo, Yanase; Hirotaka, Sasakura; Shinjiro, Hara; Junichi, Motohisa | Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires | - | Japanese Journal of Applied Physics | - | 17-Feb-2017 |
| article (author version) | Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures | - | Japanese Journal of Applied Physics | - | Jan-2017 |
| article | Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Chiba, Kohei; Motohisa, Junichi | Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications | - | ECS Transactions | - | Oct-2016 |
| article | Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Recent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology | - | ECS Transactions | - | Oct-2016 |
| proceedings (author version) | Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Advances in Steep-Slope Tunnel FETs | - | - | - | Sep-2016 |
| article (author version) | Hayashida, Atsushi; Sato, Takuya; Hara, Shinjiro; Motohisa, Junichi; Hiruma, Kenji; Fukui, Takashi | Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires | - | Journal of Crystal Growth | - | 1-Dec-2010 |
| article | Dorenbos, S. N.; Sasakura, H.; van Kouwen, M. P.; Akopian, N.; Adachi, S.; Namekata, N.; Jo, M.; Motohisa, J.; Kobayashi, Y.; Tomioka, K.; Fukui, T.; Inoue, S.; Kumano, H.; Natarajan, C. M.; Hadfield, R. H.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V.; Suemune, I. | Position controlled nanowires for infrared single photon emission | - | Applied Physics Letters | - | 25-Oct-2010 |
| article | Pal, B.; Goto, K.; Ikezawa, M.; Masumoto, Y.; Mohan, P.; Motohisa, J.; Fukui, T. | Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires | - | Applied Physics Letters | - | Aug-2008 |
| article | Hua, Bin; Motohisa, Junichi; Ding, Ying; Hara, Shinjiroh; Fukui, Takashi | Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy | - | Applied Physics Letters | - | 24-Sep-2007 |
| article | Nataraj, Devaraj; Ooike, Noboru; Motohisa, Junichi; Fukui, Takashi | Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy | - | Applied Physics Letters | - | 7-Nov-2005 |
| article | Noborisaka, J.; Motohisa, J.; Hara, S.; Fukui, T. | Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy | - | Applied Physics Letters | - | 29-Aug-2005 |
| article | Miyoshi, Yoshihito; Nakajima, Fumito; Motohisa, Junichi; Fukuia, Takashi | A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy | - | Applied Physics Letters | - | 18-Jul-2005 |
Showing results 1 to 20 of 33
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