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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Tamai, Isao; Sato, Taketomo; Hasegawa, HidekiFormation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates-Physica E: Low-dimensional Systems and Nanostructures-Mar-2004
article (author version)Sato, Taketomo; Kaneshiro, Chinami; Okada, Hiroshi; Hasegawa, HidekiFormation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-1999
articleAkazawa, Masamichi; Hasegawa, HidekiFormation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics-Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures-Jul-2007
article (author version)Kawaguchi, Akira; Suzuki, Tadaki; Kimura, Takashi; Sakai, Naoki; Ayabe, Tokiyoshi; Sawa, Hirofumi; Hasegawa, HidekiFunctional analysis of an α-helical antimicrobial peptide derived from a novel mouse defensin-like gene-Biochemical and Biophysical Research Communications-6-Aug-2010
article (author version)Kasai, Seiya; Hasegawa, HidekiGaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture-Physica E: Low-dimensional Systems and Nanostructures-Mar-2002
proceedings (author version)Kasai, Seiya; Amemiya, Yoshihito; Hasegawa, HidekiGaAs Schottky Wrap-Gate Binary-Decision-Diagram Devices for Realization of Novel Single Electron Logic Architecture---2000
article (author version)Kasai, Seiya; Hasegawa, HidekiGaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Mar-2001
bulletin (article)長沢, 進; 藤島, 直人; 大野, 英男; 長谷川, 英機GaAsを活性層とする光伝導形受光素子Photoconductive Detectors with GaAs Active Layer北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-Jul-1986
article (author version)Yumoto, Miki; Kasai, Seiya; Hasegawa, HidekiGraph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates-Applied Surface Science-8-May-2002
bulletin (article)Hasegawa, Hideki; Kojima, Kiyoaki; Sakai, Takamasa; Tagashira, HiroakiGrowth and properties of Iron-Doped LPE GaAs Layers-北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University25-Mar-1977
articleSato, Taketomo; Tamai, Isao; Hasegawa, HidekiGrowth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2004
articleSato, Taketomo; Tamai, Isao; Hasegawa, HidekiGrowth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
article (author version)Sato, Taketomo; Oikawa, Takeshi; Hasegawa, HidekiGrowth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
articleHASEGAWA, Hideki; KASAI, Seiya; SATO, TaketomoHexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs-IEICE TRANSACTIONS on Electronics-Oct-2004
article (author version)Hasegawa, Hideki; Kasai, SeiyaHexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires-Physica E: Low-dimensional Systems and Nanostructures-Oct-2001
article (author version)Akazawa, Masamichi; Hasegawa, HidekiHigh-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers-Applied Surface Science-15-Jul-2010
articleHasegawa, Hideki; Akazawa, MasamichiHydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering-Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures-Jul-2007
article (author version)Kasai, Seiya; Hasegawa, HidekiIII-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks-Applied Surface Science-8-May-2002
bulletin (article)楊, 炳雄; 石井, 宏辰; 飯塚, 浩一; 長谷川, 英機; 大野, 英男InPをPソースとするInPのMBE成長MBE Growth of InP Using Polycrystalline InP as the Phosphorus Source北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-May-1990
articleKotani, Junji; Kaneko, Masamitsu; Hasegawa, Hideki; Hashizume, TamotsuLarge reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-Jul-2006
Showing results 21 to 40 of 88
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