| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article | Kotani, Junji; Kaneko, Masamitsu; Hasegawa, Hideki; Hashizume, Tamotsu | Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | Jul-2006 |
| article | Kokawa, Takuya; Sato, Taketomo; Hasegawa, Hideki; Hashizume, Tamotsu | Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | 25-Jul-2006 |
| article (author version) | Akazawa, Masamichi; Hasegawa, Hideki | MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices | - | Journal of Crystal Growth | - | Apr-2007 |
| bulletin (article) | 赤津, 祐史; 松本, 昌治; 大野, 英男; 長谷川, 英機 | MBE成長によるGaAsおよびAlGaAs中の深い準位 | Deep Levels in GaAs and AlGaAs Grown by MBE | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-May-1985 |
| bulletin (article) | 橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機 | MOCVD成長によるアンドープGaAs中の電子トラップ | Deep Electron Traps in Undoped GaAs Grown by MOCVD | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-May-1984 |
| bulletin (article) | 松原, 義徳; 後藤, 修; 大塚, 俊介; 長谷川, 英機; 大野, 英男 | MOVPE法によるInAsの原子層エピタキシと成長機構 | Atomic Layer Epitaxy of InAs by MOVPE and Growth Mechanism | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-May-1990 |
| bulletin (article) | 下妻, 光夫; 田頭, 博昭; 長谷川, 英機 | N2とCH4の混合ガス中における電離電流の増倍と電離係数 | Ionization Current Growth and the Ionization Coefficients in N2 and CH4 Mixtures | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 30-May-1981 |
| article (author version) | Yumoto, Miki; Kasai, Seiya; Hasegawa, Hideki | Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2002 |
| article (author version) | Miyazaki, Masaya; Nishihara, Hiroshi; Hasegawa, Hideki; Tashiro, Masato; Wang, Lei; Kimura, Taichi; Tanino, Mishie; Tsuda, Masumi; Tanaka, Shinya | NS1-binding protein abrogates the elevation of cell viability by the influenza A virus NS1 protein in association with CRKL | - | Biochemical and biophysical research communications | - | 29-Nov-2013 |
| article (author version) | Fu, Zhengwen; Takahashi, Hiroshi; Kasai, Seiya; Hasegawa, Hideki | Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-2002 |
| article (author version) | Shiozaki, Nanako; Sato, Taketomo; Akazawa, Masamichi; Hasegawa, Hideki | Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices | - | Journal de Physique IV | - | Mar-2006 |
| article (author version) | Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu | Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits | - | Journal of Physics: Conference Series | - | 2006 |
| article (author version) | Endo, Makoto; Jin, Zhi; Kasai, Seiya; Hasegawa, Hideki | Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2002 |
| proceedings (author version) | Sato, Taketomo; Tamai, Isao; Hasegawa, Hideki | Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism | - | Institute of Physics conference series | - | 2003 |
| article | Sato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki; Hashizume, Tamotsu | Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | 26-Jul-2006 |
| article (author version) | Sato, Taketomo; Fujino, Toshiyuki; Hasegawa, Hideki | Self-assembled formation of uniform InP nanopore arrays by electrochemical anodization in HCl based electrolyte | - | Applied Surface Science | - | 30-May-2006 |
| article (author version) | Fujioka, Yoichiro; Nishide, Shinya; Ose, Toyoyuki; Suzuki, Tadaki; Kato, Izumi; Fukuhara, Hideo; Fujioka, Mari; Horiuchi, Kosui; Satoh, Aya O.; Nepal, Prabha; Kashiwagi, Sayaka; Wang, Jing; Horiguchi, Mika; Sato, Yuko; Paudel, Sarad; Nanbo, Asuka; Miyazaki, Tadaaki; Hasegawa, Hideki; Maenaka, Katsumi; Ohba, Yusuke | A Sialylated Voltage-Dependent Ca2+ Channel Binds Hemagglutinin and Mediates Influenza A Virus Entry into Mammalian Cells | - | Cell host & microbe | - | 13-Jun-2018 |
| bulletin (article) | 松尾, 望; 大野, 英男; 長谷川, 英機 | SiO2光導波路とGaAs受光素子の分布結合方式における光結合長の解析 : 光・電子集積回路におけるO/E変換部の検討 | Analysis of Coupling Length for Distributed Coupling between SiO2 optical waveguides and GaAs photodetectors : A Study of O/E Interface in Optoelectronic Integrated Circuits | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-Jan-1984 |
| bulletin (article) | Hasegawa, Hideki; Okizaki, Hiroaki | Slow-Wave Coplanar Strip Lines on Semiconducting Substrates | - | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 11-Jul-1977 |
| bookchapter (author version) | Yumoto, Miki; Kasai, Seiya; Hasegawa, Hideki | Speed-Power Performances of Quantum Wire Switches Controlled by Nanometer-Scale Schottky Wrap Gates for GaAs based Hexagonal BDD Quantum LSIs | - | - | - | 15-Jun-2005 |
