| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article | Miwa, Kazuki; Komatsu, Yuto; Toguchi, Masachika; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, Taketomo | Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures | - | Applied Physics Express (APEX) | - | 1-Feb-2020 |
| article (author version) | Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo | Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices | - | IEEE transactions on semiconductor manufacturing | - | Nov-2019 |
| article (author version) | Sato, Taketomo; Toguchi, Masachika; Komatsu, Yuto; Uemura, Keisuke | Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions | - | IEEE transactions on semiconductor manufacturing | - | Nov-2019 |
| article (author version) | Akazawa, Masamichi; Kitajima, Shouhei; Kitawaki, Yuya | Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Oct-2019 |
| article (author version) | Akazawa, Masamichi; Kitajima, Shouhei | Control of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Aug-2019 |
| article | Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo | Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect | - | Journal of the electrochemical society | - | 15-Jul-2019 |
| article | Hiramatsu, Shota; Ikebe, Masayuki; Sano, Eiichi | 2.4GHz wake-up receiver with suppressed substrate noise coupling | - | Analog integrated circuits and signal processing | - | Jul-2019 |
| article (author version) | Akazawa, Masamichi; Uetake, Kei | Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jun-2019 |
| article | Uemura, Keisuke; Deki, Manato; Honda, Yoshio; Amano, Hiroshi; Sato, Taketomo | Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jun-2019 |
| article (author version) | Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, Taketomo | Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions | - | Applied Physics Express | - | Jun-2019 |
| article (author version) | Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, Taketomo | Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN | - | Japanese Journal of Applied Physics (JJAP) | - | Dec-2018 |
| article | Hashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, Kenya | Effects of postmetallization annealing on interface properties of Al2O3/GaN structures | - | Applied Physics Express (APEX) | - | Dec-2018 |
| article | Isobe, Kazuki; Akazawa, Masamichi | Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode | - | AIP Advances | - | Nov-2018 |
| article | Horiguchi, Ryoma; Hara, Shinjiro; Iida, Masaya | Magnetic domain structure and domain wall analysis of ferromagnetic MnAs nanodisks selectively-grown on Si (111) substrates for spintronic applications | - | Journal of Applied Physics | - | 21-Oct-2018 |
| article | Hashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, Zenji | State of the art on gate insulation and surface passivation for GaN-based power HEMTs | - | Materials science in semiconductor processing | - | May-2018 |
| article (author version) | Akazawa, Masamichi; Hasezaki, Taito | Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces | - | Physica status solidi B-basic solid state physics | - | May-2018 |
| article (author version) | Kasai, Seiya; Ichiki, Akihisa; Tadokoro, Yukihiro | Divergence of relative difference in Gaussian distribution function and stochastic resonance in a bistable system with frictionless state transition | - | Applied Physics Express (APEX) | - | Mar-2018 |
| article | Akazawa, Masamichi; Yokota, Naoshige; Uetake, Kei | Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing | - | AIP Advances | - | Feb-2018 |
| article | Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu | Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors | - | Japanese Journal of Applied Physics (JJAP) | - | Oct-2017 |
| article (author version) | Akazawa, Masamichi; Seino, Atsushi | Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers | - | Physica status solidi B-basic solid state physics | - | Aug-2017 |
