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Showing results 1 to 20 of 20
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleFujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, IchiroAnalysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy-Journal of Materials Research-28-Mar-2012
articleGyakushi, Takayuki; Asai, Yuki; Honjo, Shusaku; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, YasuoCharge-offset stability of single-electron devices based on single-layered Fe nanodot array-AIP Advances-1-Mar-2021
article (author version)Tsurumaki-Fukuchi, Atsushi; Tsuta, Yusuke; Arita, Masashi; Takahashi, YasuoControlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx-Physica status solidi. Rapid research letters-Jul-2019
article (author version)Kitamura, Akira; Kubota, Hiroshi; Pack, Chan-Gi; Matsumoto, Gen; Hirayama, Shoshiro; Takahashi, Yasuo; Kimura, Hiroshi; Kinjo, Masataka; Morimoto, Richard; Nagata, KazuhiroCytosolic chaperonin prevents polyglutamine toxicity with altering the aggregation state.-Nature cell biology-Dec-2006
articleTsurumaki-Fukuchi, Atsushi; Katase, Takayoshi; Ohta, Hiromichi; Arita, Masashi; Takahashi, YasuoDirect Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics-ACS applied materials & interfaces-5-Apr-2023
articleGyakushi, Takayuki; Amano, Ikuma; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, YasuoDouble gate operation of metal nanodot array based single electron device-Scientific reports-6-Jul-2022
article (author version)Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, YasuoEELS Analysis of Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt-MRS Advances-2018
articleUchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Fujiwara, Akira; Takahashi, YasuoFabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire-AIP advances-Nov-2015
article (author version)Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, YasuoFabrication of double-dot single-electron transistor in silicon nanowire-Thin Solid Films-1-Jan-2010
articleKudo, Masaki; Arita, Masashi; Ohno, Yuuki; Takahashi, YasuoFilament formation and erasure in molybdenum oxide during resistive switching cycles-Applied Physics Letters-27-Oct-2014
article (author version)Arita, Masashi; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoFilamentary switching of ReRAM investigated by in-situ TEM-Japanese Journal of Applied Physics (JJAP)-1-Apr-2020
bookchapterArita, Masashi; Hamada, Kouichi; Takahashi, Yasuo; Sueoka, Kazuhisa; Shibayama, TamakiIn Situ Transmission Electron Microscopy for Electronics---2-Sep-2015
articleFujii, Takashi; Arita, Masashi; Hamada, Kouichi; Takahashi, Yasuo; Sakaguchi, NorihitoIn-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis-Journal of Applied Physics-28-Feb-2013
articleKondo, H.; Kaji, H.; Fujii, T.; Hamada, K.; Arita, M.; Takahashi, Y.The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure-IOP Conference Series: Materials Science and Engineering-2010
articleKye, H. W.; Song, B. N.; Lee, S. E.; Kim, J. S.; Shin, S. J.; Choi, J. B.; Yu, Y. -S.; Takahashi, Y.One electron-controlled multiple-valued dynamic random-access-memory-AIP Advances-Feb-2016
articleKomatsu, Yoshito; Okita, Kenji; Yuki, Satoshi; Furuhata, Tomohisa; Fukushima, Hiraku; Masuko, Hiroyuki; Kawamoto, Yasuyuki; Isobe, Hiroshi; Miyagishima, Takuto; Sasaki, Kazuaki; Nakamura, Michio; Ohsaki, Yoshinobu; Nakajima, Junta; Tateyama, Miki; Eto, Kazunori; Minami, Shinya; Yokoyama, Ryoji; Iwanaga, Ichiro; Shibuya, Hitoshi; Kudo, Mineo; Oba, Koji; Takahashi, YasuoOpen-label, randomized, comparative, phase III study on effects of reducing steroid use in combination with Palonosetron-Cancer science-Jul-2015
articleShin, S. J.; Jung, C. S.; Park, B. J.; Yoon, T. K.; Lee, J. J.; Kim, S. J.; Choi, J. B.; Takahashi, Y.; Hasko, D. G.Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature-Applied Physics Letters-6-Sep-2010
article (author version)Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, YasuoSmooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx-ACS Applied Materials & Interfaces-22-Jan-2018
article (author version)Tsurumaki-Fukuchi, Atsushi; Tsubaki, Keiji; Katase, Takayoshi; Kamiya, Toshio; Masashi, Arita; Takahashi, YasuoStable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4-ACS applied materials & interfaces-24-Jun-2020
articleArita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoSwitching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM-Scientific Reports-27-Nov-2015
Showing results 1 to 20 of 20

 

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