| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| proceedings (author version) | Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Advances in Steep-Slope Tunnel FETs | - | - | - | Sep-2016 |
| article | Noborisaka, Jinichiro; Motohisa, Junichi; Fukui, Takashi | Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy | - | Applied Physics Letters | - | 23-May-2005 |
| article (author version) | Motohisa, J.; Noborisaka, J.; Takeda, J.; Inari, M.; Fukui, T. | Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates | - | Journal of Crystal Growth | - | 10-Dec-2004 |
| article | Hua, Bin; Motohisa, Junichi; Ding, Ying; Hara, Shinjiroh; Fukui, Takashi | Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy | - | Applied Physics Letters | - | 24-Sep-2007 |
| article | Tomioka, Katsuhiro; Fukui, Takashi | Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length | - | Applied Physics Letters | - | 19-Feb-2014 |
| article | Kim, Hyo Jin; Mothohisa, Junichi; Fukui, Takashi | Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate | - | Nanoscale Research Letters | - | 6-Feb-2012 |
| article (author version) | Hayashida, Atsushi; Sato, Takuya; Hara, Shinjiro; Motohisa, Junichi; Hiruma, Kenji; Fukui, Takashi | Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires | - | Journal of Crystal Growth | - | 1-Dec-2010 |
| article | Motohisa, J.; Nakajima, F.; Fukui, T.; van der Wiel, W. G.; Elzerman, J. M.; De Franceschi, S.; Kouwenhoven, L. P. | Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors | - | Applied Physics Letters | - | 15-Apr-2002 |
| article | Mohan, Premila; Nakajima, Fumito; Akabori, Masashi; Motohisa, Junichi; Fukui, Takashi | Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy | - | Applied Physics Letters | - | 28-Jul-2003 |
| article | Kim, Hyo Jin; Motohisa, Junichi; Fukui, Takashi | Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates | - | Applied Physics Letters | - | 30-Dec-2002 |
| article | Nakajima, Fumito; Ogasawara, Yuu; Motohisa, Junichi; Fukui, Takashi | GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices | - | Journal of Applied Physics | - | 1-Sep-2001 |
| article (author version) | Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, Takashi | GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE | - | Nanotechnology | - | 22-Mar-2013 |
| article (author version) | Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures | - | Japanese Journal of Applied Physics | - | Jan-2017 |
| article (author version) | Motohisa, J.; Takeda, J.; Inari, M.; Noborisaka, J.; Fukui, T. | Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE | - | Physica E: Low-dimensional Systems and Nanostructures | - | Jul-2004 |
| article (author version) | Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Fukui, Takashi | Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE | - | Journal of crystal growth | - | 1-Feb-2015 |
| article | Hara, Shinjiroh; Fukui, Takashi | Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs∕InP (111)B layers by metal-organic vapor phase epitaxy | - | Applied Physics Letters | - | Sep-2006 |
| article | Yoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro; Fukui, Takashi | Indium tin oxide and indium phosphide heterojunction nanowire array solar cells | - | Applied Physics Letters | - | 9-Dec-2013 |
| article | Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi; Fukui, Takashi | InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor | - | Applied physics letters | - | 21-Sep-2020 |
| article (author version) | Motohisa, J.; van der Wiel, W. G.; Elzerman, J. M.; De Franceschi, S.; Nakajima, F.; Ogasawara, Y.; Fukui, T.; Kouwenhoven, L. P. | Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy | - | Physica E: Low-dimensional Systems and Nanostructures | - | Apr-2002 |
| article | Ito, Shingo; Hara, Shinjiroh; Wakatsuki, Toshitomo; Fukui, Takashi | Magnetic domain characterizations of anisotropic-shaped MnAs nanoclusters position-controlled by selective-area metal-organic vapor phase epitaxy | - | Applied Physics Letters | - | 15-Jun-2009 |
