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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleFujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, IchiroAnalysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy-Journal of Materials Research-28-Mar-2012
articleGyakushi, Takayuki; Asai, Yuki; Honjo, Shusaku; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, YasuoCharge-offset stability of single-electron devices based on single-layered Fe nanodot array-AIP Advances-1-Mar-2021
article (author version)Arita, Masashi; Hirose, Ryusuke; Hamada, Kouichi; Takahashi, YasuoConductance measurements of nanoscale regions with in situ transmission electron microscopy-Materials Science and Engineering: C-Jun-2006
article (author version)Tsurumaki-Fukuchi, Atsushi; Tsuta, Yusuke; Arita, Masashi; Takahashi, YasuoControlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx-Physica status solidi. Rapid research letters-Jul-2019
article (author version)Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, YasuoEELS Analysis of Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt-MRS Advances-2018
articleLi, Gui-fang; Honda, Yusuke; Liu, Hong-xi; Matsuda, Ken-ichi; Arita, Masashi; Uemura, Tetsuya; Yamamoto, Masafumi; Miura, Yoshio; Shirai, Masafumi; Saito, Toshiaki; Shi, Fengyuan; Voyles, Paul M.Effect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling magnetoresistance ratio-Physical Review B-30-Jan-2014
articleUchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Fujiwara, Akira; Takahashi, YasuoFabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire-AIP advances-Nov-2015
article (author version)Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, YasuoFabrication of double-dot single-electron transistor in silicon nanowire-Thin Solid Films-1-Jan-2010
articleKudo, Masaki; Arita, Masashi; Ohno, Yuuki; Takahashi, YasuoFilament formation and erasure in molybdenum oxide during resistive switching cycles-Applied Physics Letters-27-Oct-2014
articleArita, Masashi; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoFilamentary switching of ReRAM investigated by in-situ TEM-Japanese Journal of Applied Physics (JJAP)-1-Apr-2020
articleLiu, Hong-xi; Honda, Yusuke; Taira, Tomoyuki; Matsuda, Ken-ichi; Arita, Masashi; Uemura, Tetsuya; Yamamoto, MasafumiGiant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling-Applied Physics Letters-24-Sep-2012
articleFujii, Takashi; Arita, Masashi; Hamada, Kouichi; Kondo, Hirofumi; Kaji, Hiromichi; Takahashi, Yasuo; Moniwa, Masahiro; Fujiwara, Ichiro; Yamaguchi, Takeshi; Aoki, Masaki; Maeno, Yoshinori; Kobayashi, Toshio; Yoshimaru, MasakiI-V measurement of NiO nanoregion during observation by transmission electron microscopy-Journal of Applied Physics-1-Mar-2011
articleFujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, IchiroIn situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching-Applied Physics Letters-23-May-2011
bookchapterArita, Masashi; Hamada, Kouichi; Takahashi, Yasuo; Sueoka, Kazuhisa; Shibayama, TamakiIn Situ Transmission Electron Microscopy for Electronics---2-Sep-2015
articleFujii, Takashi; Arita, Masashi; Hamada, Kouichi; Takahashi, Yasuo; Sakaguchi, NorihitoIn-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis-Journal of Applied Physics-28-Feb-2013
articleKondo, H.; Kaji, H.; Fujii, T.; Hamada, K.; Arita, M.; Takahashi, Y.The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure-IOP Conference Series: Materials Science and Engineering-2010
article (author version)Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, YasuoMicrostructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles-Nanoscale-Aug-2016
article (author version)Arita, M.; Kaji, H.; Fujii, T.; Takahashi, Y.Resistance switching properties of molybdenum oxide films-Thin Solid Films-1-May-2012
articleTsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, YasuoSmooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx-ACS Applied Materials & Interfaces-22-Jan-2018
articleIshikawa, T.; Marukame, T.; Kijima, H.; Matsuda, K.-I.; Uemura, T.; Arita, M.; Yamamoto, M.Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co[sub 2]MnSi thin film and a MgO tunnel barrier-Applied Physics Letters-6-Nov-2006
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