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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Sato, Taketomo; Mizohata, Akinori; Yoshizawa, Naoki; Hashizume, TamotsuAmperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures-Applied Physics Express-May-2008
articleToguchi, Masachika; Miwa, Kazuki; Sato, TaketomoCommunication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect-Journal of the electrochemical society-15-Jul-2019
articleKumazaki, Yusuke; Watanabe, Akio; Yatabe, Zenji; Sato, TaketomoCorrelation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching-Journal of the Electrochemical Society-6-Aug-2014
article (author version)Tamai, Isao; Sato, Taketomo; Hasegawa, HidekiCross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
article (author version)Sato, Taketomo; Kasai, Seiya; Hasegawa, HidekiCurrent transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process-Applied Surface Science-2001
articleUemura, Keisuke; Deki, Manato; Honda, Yoshio; Amano, Hiroshi; Sato, TaketomoEffect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors-Japanese Journal of Applied Physics (JJAP)-1-Jun-2019
articleShiozaki, Nanako; Sato, Taketomo; Hasegawa, HidekiEffects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
article (author version)Hirano, Tetsuro; Ito, Akira; Sato, Taketomo; Ishikawa, Fumitaro; Hasegawa, HidekiElectrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots-Japanese Journal of Applied Physics part 1, Regular papers & short notes-Feb-2002
articleSato, Taketomo; Fujino, Toshiyuki; Hashizume, TamotsuElectrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions-Electrochemical and Solid-State Letters-2007
articleSato, Taketomo; Mizohata, Akinori; Hashizume, TamotsuElectrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors-Journal of The Electrochemical Society-2010
article (author version)Hasegawa, Hideki; Sato, TaketomoElectrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures-Electrochimica Acta-20-May-2005
article (author version)Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, HidekiEvolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy-Applied Surface Science-15-Jul-2004
article (author version)Kumazaki, Yusuke; Yatabe, Zenji; Sato, TaketomoFormation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching-Japanese Journal of Applied Physics (JJAP)-Apr-2016
articleWatanabe, Akio; Kumazaki, Yusuke; Yatabe, Zenji; Sato, TaketomoFormation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode-ECS Electrochemistry Letters-14-Mar-2015
article (author version)Tamai, Isao; Sato, Taketomo; Hasegawa, HidekiFormation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates-Physica E: Low-dimensional Systems and Nanostructures-Mar-2004
article (author version)Shiozaki, Nanako; Sato, Taketomo; Hashizume, TamotsuFormation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2007
article (author version)Yoshizawa, Naoki; Sato, Taketomo; Hashizume, TamotsuFundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors-Japanese Journal of Applied Physics-Sep-2009
articleSato, Taketomo; Tamai, Isao; Hasegawa, HidekiGrowth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
article (author version)Sato, Taketomo; Oikawa, Takeshi; Hasegawa, HidekiGrowth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
articleHASEGAWA, Hideki; KASAI, Seiya; SATO, TaketomoHexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs-IEICE TRANSACTIONS on Electronics-Oct-2004
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