| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article (author version) | Sato, Taketomo; Mizohata, Akinori; Yoshizawa, Naoki; Hashizume, Tamotsu | Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures | - | Applied Physics Express | - | May-2008 |
| article | Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo | Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect | - | Journal of the electrochemical society | - | 15-Jul-2019 |
| article | Kumazaki, Yusuke; Watanabe, Akio; Yatabe, Zenji; Sato, Taketomo | Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching | - | Journal of the Electrochemical Society | - | 6-Aug-2014 |
| article (author version) | Tamai, Isao; Sato, Taketomo; Hasegawa, Hideki | Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers | - | Apr-2005 |
| article (author version) | Sato, Taketomo; Kasai, Seiya; Hasegawa, Hideki | Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process | - | Applied Surface Science | - | 2001 |
| article | Uemura, Keisuke; Deki, Manato; Honda, Yoshio; Amano, Hiroshi; Sato, Taketomo | Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jun-2019 |
| article (author version) | Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, Taketomo | Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN | - | Japanese Journal of Applied Physics (JJAP) | - | Dec-2018 |
| article | Shiozaki, Nanako; Sato, Taketomo; Hasegawa, Hideki | Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
| article (author version) | Hirano, Tetsuro; Ito, Akira; Sato, Taketomo; Ishikawa, Fumitaro; Hasegawa, Hideki | Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots | - | Japanese Journal of Applied Physics part 1, Regular papers & short notes | - | Feb-2002 |
| article | Sato, Taketomo; Fujino, Toshiyuki; Hashizume, Tamotsu | Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions | - | Electrochemical and Solid-State Letters | - | 2007 |
| article | Sato, Taketomo; Mizohata, Akinori; Hashizume, Tamotsu | Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors | - | Journal of The Electrochemical Society | - | 2010 |
| article (author version) | Hasegawa, Hideki; Sato, Taketomo | Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures | - | Electrochimica Acta | - | 20-May-2005 |
| article (author version) | Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, Taketomo | Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions | - | Applied Physics Express | - | Jun-2019 |
| article (author version) | Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, Hideki | Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy | - | Applied Surface Science | - | 15-Jul-2004 |
| article | Shimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, Junichi | Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment | - | Applied Physics Express (APEX) | - | 1-Nov-2021 |
| article (author version) | Kumazaki, Yusuke; Yatabe, Zenji; Sato, Taketomo | Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching | - | Japanese Journal of Applied Physics (JJAP) | - | Apr-2016 |
| article | Watanabe, Akio; Kumazaki, Yusuke; Yatabe, Zenji; Sato, Taketomo | Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode | - | ECS Electrochemistry Letters | - | 14-Mar-2015 |
| article (author version) | Tamai, Isao; Sato, Taketomo; Hasegawa, Hideki | Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates | - | Physica E: Low-dimensional Systems and Nanostructures | - | Mar-2004 |
| article (author version) | Shiozaki, Nanako; Sato, Taketomo; Hashizume, Tamotsu | Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2007 |
| article (author version) | Yoshizawa, Naoki; Sato, Taketomo; Hashizume, Tamotsu | Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors | - | Japanese Journal of Applied Physics | - | Sep-2009 |
