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Hokkaido University Collection of Scholarly and Academic Papers >
Showing results 1 to 20 of 32
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Miyoshi, Yoshihito; Nakajima, Fumito; Motohisa, Junichi; Fukuia, Takashi | A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy | - | Applied Physics Letters | - | 18-Jul-2005 |
| proceedings (author version) | Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Advances in Steep-Slope Tunnel FETs | - | - | - | Sep-2016 |
| article | Noborisaka, Jinichiro; Motohisa, Junichi; Fukui, Takashi | Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy | - | Applied Physics Letters | - | 23-May-2005 |
| article (author version) | Motohisa, J.; Noborisaka, J.; Takeda, J.; Inari, M.; Fukui, T. | Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates | - | Journal of Crystal Growth | - | 10-Dec-2004 |
| article | Hua, Bin; Motohisa, Junichi; Ding, Ying; Hara, Shinjiroh; Fukui, Takashi | Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy | - | Applied Physics Letters | - | 24-Sep-2007 |
| article | Besombes, L.; Baumberg, J. J.; Motohisa, J. | Coherent Spectroscopy of Optically Gated Charged Single InGaAs Quantum Dots | - | Physical Review Letters | - | 27-Jun-2003 |
| article | Chiba, Kohei; Tomioka, Katsuhiro; Yoshida, Akinobu; Motohisa, Junichi | Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform | - | AIP Advances | - | Dec-2017 |
| article | Yoshida, Akinobu; Gamo, Hironori; Motohisa, Junichi; Tomioka, Katsuhiro | Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium | - | Scientific reports | - | 31-Jan-2022 |
| article | Akamatsu, Tomoya; Tomioka, Katsuhiro; Motohisa, Junichi | Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs | - | Nanotechnology | - | 25-Sep-2020 |
| article | Noborisaka, J.; Motohisa, J.; Hara, S.; Fukui, T. | Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy | - | Applied Physics Letters | - | 29-Aug-2005 |
| article (author version) | Hayashida, Atsushi; Sato, Takuya; Hara, Shinjiro; Motohisa, Junichi; Hiruma, Kenji; Fukui, Takashi | Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires | - | Journal of Crystal Growth | - | 1-Dec-2010 |
| article | Motohisa, J.; Nakajima, F.; Fukui, T.; van der Wiel, W. G.; Elzerman, J. M.; De Franceschi, S.; Kouwenhoven, L. P. | Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors | - | Applied Physics Letters | - | 15-Apr-2002 |
| article | Shimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, Junichi | Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment | - | Applied Physics Express (APEX) | - | 1-Nov-2021 |
| article | Nataraj, Devaraj; Ooike, Noboru; Motohisa, Junichi; Fukui, Takashi | Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy | - | Applied Physics Letters | - | 7-Nov-2005 |
| article | Mohan, Premila; Nakajima, Fumito; Akabori, Masashi; Motohisa, Junichi; Fukui, Takashi | Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy | - | Applied Physics Letters | - | 28-Jul-2003 |
| article | Kim, Hyo Jin; Motohisa, Junichi; Fukui, Takashi | Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates | - | Applied Physics Letters | - | 30-Dec-2002 |
| article | Nakajima, Fumito; Ogasawara, Yuu; Motohisa, Junichi; Fukui, Takashi | GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices | - | Journal of Applied Physics | - | 1-Sep-2001 |
| article (author version) | Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi | Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures | - | Japanese Journal of Applied Physics | - | Jan-2017 |
| article (author version) | Motohisa, J.; Takeda, J.; Inari, M.; Noborisaka, J.; Fukui, T. | Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE | - | Physica E: Low-dimensional Systems and Nanostructures | - | Jul-2004 |
| article (author version) | Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi | Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy | - | Journal of Crystal Growth | - | 15-Apr-2017 |
Showing results 1 to 20 of 32
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