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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, ToshikiAl2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-15-Jun-2004
bulletin (article)Moniwa, Masahiro; Yamamoto, Hidekazu; Hasegawa, HidekiAmorphous Silicon Schottky and MIS Solar Cells by rf Sputtering and rf Glow Discharge Decomposition-Memoirs of the Faculty of Engineering, Hokkaido University北海道大学工学部紀要Dec-1981
bulletin (article)Hasegawa, HidekiAnodic Native Oxidation of GaAs by AGW Process-北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University19-Mar-1976
article (author version)Kasai, Seiya; Neguro, Noboru; Hasegawa, HidekiConductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors-Applied Surface Science-15-May-2001
article (author version)Kasai, Seiya; Satoh, Yoshihiro; Hasegawa, HidekiConductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors-Physica B: Condensed Matter-1-Dec-1999
article (author version)Hasegawa, HidekiControl of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures-Current Applied Physics-Mar-2007
article (author version)Tamai, Isao; Sato, Taketomo; Hasegawa, HidekiCross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers-Apr-2005
article (author version)Sato, Taketomo; Kasai, Seiya; Hasegawa, HidekiCurrent transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process-Applied Surface Science-2001
articleShiozaki, Nanako; Sato, Taketomo; Hasegawa, HidekiEffects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
article (author version)Kameda, Atsushi; Kasai, Seiya; Sato, Taketomo; Hasegawa, HidekiEffects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs-Solid-State Electronics-Feb-2003
article (author version)Sato, Taketomo; Kasai, Seiya; Okada, Hiroshi; Hasegawa, HidekiElectrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Jul-2000
article (author version)Kaneshiro, Chinami; Sato, Taketomo; Hasegawa, HidekiElectrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Feb-1999
article (author version)Hirano, Tetsuro; Ito, Akira; Sato, Taketomo; Ishikawa, Fumitaro; Hasegawa, HidekiElectrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots-Japanese Journal of Applied Physics part 1, Regular papers & short notes-Feb-2002
article (author version)Hasegawa, Hideki; Sato, TaketomoElectrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures-Electrochimica Acta-20-May-2005
article (author version)Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiElectron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Dec-1996
article (author version)Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, HidekiEvolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy-Applied Surface Science-15-Jul-2004
article (author version)Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa; Hasegawa, HidekiFabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Mar-1997
articleXIE, Yong-Gui; KASAI, Seiya; TAKAHASHI, Hiroshi; JIANG, Chao; HASEGAWA, HidekiFabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer-IEICE Transactions on Electronics-Oct-2001
article (author version)Kasai, Seiya; Hasegawa, HidekiFabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Feb-1996
article (author version)Seiya, Kasai; Yumoto, Miki; Hasegawa, HidekiFabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach-Solid-State Electronics-Feb-2003
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