Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
article (author version) | Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, Toshiki | Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | 15-Jun-2004 |
bulletin (article) | Moniwa, Masahiro; Yamamoto, Hidekazu; Hasegawa, Hideki | Amorphous Silicon Schottky and MIS Solar Cells by rf Sputtering and rf Glow Discharge Decomposition | - | Memoirs of the Faculty of Engineering, Hokkaido University | 北海道大学工学部紀要 | Dec-1981 |
bulletin (article) | Hasegawa, Hideki | Anodic Native Oxidation of GaAs by AGW Process | - | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 19-Mar-1976 |
article (author version) | Kasai, Seiya; Neguro, Noboru; Hasegawa, Hideki | Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors | - | Applied Surface Science | - | 15-May-2001 |
article (author version) | Kasai, Seiya; Satoh, Yoshihiro; Hasegawa, Hideki | Conductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors | - | Physica B: Condensed Matter | - | 1-Dec-1999 |
article (author version) | Hasegawa, Hideki | Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures | - | Current Applied Physics | - | Mar-2007 |
article (author version) | Tamai, Isao; Sato, Taketomo; Hasegawa, Hideki | Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers | - | Apr-2005 |
article (author version) | Sato, Taketomo; Kasai, Seiya; Hasegawa, Hideki | Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process | - | Applied Surface Science | - | 2001 |
article (author version) | Nakano, Tetsuo; Ohara, Yuki; Fujita, Hiroshi; Ainai, Akira; Yamamura, Ei-Tora; Suzuki, Tadaki; Hasegawa, Hideki; Sone, Teruo; Asano, Kozo | Double-Stranded Structure of the Polyinosinic-Polycytidylic Acid Molecule to Elicit TLR3 Signaling and Adjuvant Activity in Murine Intranasal A(H1N1)pdm09 Influenza Vaccination | - | DNA and Cell Biology | - | 4-Sep-2020 |
article | Shiozaki, Nanako; Sato, Taketomo; Hasegawa, Hideki | Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
article (author version) | Kameda, Atsushi; Kasai, Seiya; Sato, Taketomo; Hasegawa, Hideki | Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs | - | Solid-State Electronics | - | Feb-2003 |
article (author version) | Sato, Taketomo; Kasai, Seiya; Okada, Hiroshi; Hasegawa, Hideki | Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Jul-2000 |
article (author version) | Kaneshiro, Chinami; Sato, Taketomo; Hasegawa, Hideki | Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-1999 |
article (author version) | Hirano, Tetsuro; Ito, Akira; Sato, Taketomo; Ishikawa, Fumitaro; Hasegawa, Hideki | Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots | - | Japanese Journal of Applied Physics part 1, Regular papers & short notes | - | Feb-2002 |
article (author version) | Hasegawa, Hideki; Sato, Taketomo | Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures | - | Electrochimica Acta | - | 20-May-2005 |
article (author version) | Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Dec-1996 |
article (author version) | Sato, Taketomo; Tamai, Isao; Yoshida, Souichi; Hasegawa, Hideki | Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy | - | Applied Surface Science | - | 15-Jul-2004 |
article (author version) | Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa; Hasegawa, Hideki | Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Mar-1997 |
article | XIE, Yong-Gui; KASAI, Seiya; TAKAHASHI, Hiroshi; JIANG, Chao; HASEGAWA, Hideki | Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer | - | IEICE Transactions on Electronics | - | Oct-2001 |
article (author version) | Kasai, Seiya; Hasegawa, Hideki | Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-1996 |