Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
article (author version) | Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, Toshiki | Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | 15-Jun-2004 |
article (author version) | Sato, Taketomo; Mizohata, Akinori; Yoshizawa, Naoki; Hashizume, Tamotsu | Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures | - | Applied Physics Express | - | May-2008 |
article | Kotani, Junji; Hashizume, Tamotsu; Hasegawa, Hideki | Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 20-Aug-2004 |
article | Matys, M.; Stoklas, R.; Kuzmik, J.; Adamowicz, B.; Yatabe, Z.; Hashizume, T. | Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures | - | Journal of Applied Physics | - | 31-May-2016 |
article | Hori, Y.; Yatabe, Z.; Hashizume, T. | Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors | - | Journal of Applied Physics | - | 27-Dec-2013 |
article (author version) | Ogawa, Eri; Hashizume, Tamotsu; Nakazawa, Satoshi; Ueda, Tetsuzo; Tanaka, Tsuyoshi | Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition | - | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters | - | 25-Jun-2007 |
article | Hashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, Hideki | Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2001 |
article (author version) | Kotani, Junji; Hasegawa, Hideki; Hashizume, Tamotsu | Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model | - | Applied Surface Science | - | 15-Oct-2004 |
article | Asubar, Joel T.; Yatabe, Zenji; Gregusova, Dagmar; Hashizume, Tamotsu | Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation | - | Journal of Applied Physics | - | 28-Mar-2021 |
article | Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu | Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors | - | Japanese Journal of Applied Physics (JJAP) | - | Oct-2017 |
article (author version) | Ohi, Kota; Asubar, Joel Tacla; Nishiguchi, Kenya; Hashizume, Tamotsu | Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs | - | IEEE Transactions on Electron Devices | - | Oct-2013 |
theses (doctoral) | Hashizume, Tamotsu | Deep Level Characterization of GaAs and AlGaAs by Capacitance Spectroscopy | 容量分光法によるGaAsおよびAlGaAsの深い準位の評価 | - | - | 25-Mar-1991 |
article | Matys, M.; Adamowicz, B.; Hashizume, T. | Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement | - | Applied Physics Letters | - | 3-Dec-2012 |
article | Matys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T. | Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method | - | Applied Physics Letters | - | 10-Jul-2013 |
article | Hashizume, Tamotsu; Nakasaki, Ryusuke | Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces | - | Applied Physics Letters | - | 17-Jul-2002 |
article | Kimura, Takeshi; Hashizume, Tamotsu | Effect of carbon incorporation on electrical properties of n-type GaN surfaces | - | Journal of Applied Physics | - | Jan-2009 |
article | Miczek, Marcin; Mizue, Chihoko; Hashizume, Tamotsu; Adamowicz, Bogusława | Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors | - | Journal of Applied Physics | - | 28-May-2008 |
article | Hashizume, Tamotsu | Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface | - | Journal of Applied Physics | - | 1-Jul-2003 |
article (author version) | Hashizume, Tamotsu; Hasegawa, Hideki | Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes | - | Applied Surface Science | - | 15-Jul-2004 |
article | Hashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, Kenya | Effects of postmetallization annealing on interface properties of Al2O3/GaN structures | - | Applied Physics Express (APEX) | - | Dec-2018 |