| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article | Shimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, Junichi | Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment | - | Applied Physics Express (APEX) | - | 1-Nov-2021 |
| article | Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, Taketomo | Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) | - | Journal of Applied Physics | - | 8-Jul-2021 |
| article | Ochi, Ryota; Maeda, Erika; Nabatame, Toshihide; Shiozaki, Koji; Sato, Taketomo; Hashizume, Tamotsu | Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor | - | AIP Advances | - | 10-Jun-2020 |
| article | Miwa, Kazuki; Komatsu, Yuto; Toguchi, Masachika; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, Taketomo | Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures | - | Applied Physics Express (APEX) | - | 1-Feb-2020 |
| article (author version) | Sato, Taketomo; Toguchi, Masachika; Komatsu, Yuto; Uemura, Keisuke | Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions | - | IEEE transactions on semiconductor manufacturing | - | Nov-2019 |
| article (author version) | Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo | Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices | - | IEEE transactions on semiconductor manufacturing | - | Nov-2019 |
| article | Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo | Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect | - | Journal of the electrochemical society | - | 15-Jul-2019 |
| article | Uemura, Keisuke; Deki, Manato; Honda, Yoshio; Amano, Hiroshi; Sato, Taketomo | Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jun-2019 |
| article (author version) | Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, Taketomo | Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions | - | Applied Physics Express | - | Jun-2019 |
| article (author version) | Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, Taketomo | Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN | - | Japanese Journal of Applied Physics (JJAP) | - | Dec-2018 |
| article | Kumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, Tamotsu | Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process | - | Journal of Applied Physics | - | 14-May-2017 |
| article | Kumazaki, Yusuke; Matsumoto, Satoru; Sato, Taketomo | Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications | - | Journal of The Electrochemical Society | - | 12-May-2017 |
| article (author version) | Kumazaki, Yusuke; Yatabe, Zenji; Sato, Taketomo | Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching | - | Japanese Journal of Applied Physics (JJAP) | - | Apr-2016 |
| article (author version) | Sato, Taketomo; Kumazaki, Yusuke; Kida, Hirofumi; Watanabe, Akio; Yatabe, Zenji; Matsuda, Soichiro | Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge | - | Semiconductor science and technology | - | Jan-2016 |
| article (author version) | Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, Tamotsu | Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces | - | Physica status solidi A applications and materials science | - | May-2015 |
| article | Watanabe, Akio; Kumazaki, Yusuke; Yatabe, Zenji; Sato, Taketomo | Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode | - | ECS Electrochemistry Letters | - | 14-Mar-2015 |
| article | Kumazaki, Yusuke; Watanabe, Akio; Yatabe, Zenji; Sato, Taketomo | Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching | - | Journal of the Electrochemical Society | - | 6-Aug-2014 |
| article (author version) | Kumazaki, Yusuke; Kudo, Tomohito; Yatabe, Zenji; Sato, Taketomo | Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices | - | Applied Surface Science | - | 15-Aug-2013 |
| article (author version) | Jinbo, Ryohei; Kudo, Tomohito; Yatabe, Zenji; Sato, Taketomo | Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure | - | Thin Solid Films | - | 30-Jun-2012 |
| article (author version) | Sato, Taketomo; Yoshizawa, Naoki; Hashizume, Tamotsu | Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells | - | Thin Solid Films | - | 31-May-2010 |
