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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, TaketomoPhotoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices-IEEE transactions on semiconductor manufacturing-Nov-2019
article (author version)Sato, Taketomo; Toguchi, Masachika; Komatsu, Yuto; Uemura, KeisukeLow-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions-IEEE transactions on semiconductor manufacturing-Nov-2019
articleToguchi, Masachika; Miwa, Kazuki; Sato, TaketomoCommunication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect-Journal of the electrochemical society-15-Jul-2019
articleUemura, Keisuke; Deki, Manato; Honda, Yoshio; Amano, Hiroshi; Sato, TaketomoEffect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors-Japanese Journal of Applied Physics (JJAP)-1-Jun-2019
article (author version)Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, TaketomoEffects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN-Japanese Journal of Applied Physics (JJAP)-Dec-2018
articleKumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, TamotsuPrecise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process-Journal of Applied Physics-14-May-2017
articleKumazaki, Yusuke; Matsumoto, Satoru; Sato, TaketomoPrecise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications-Journal of The Electrochemical Society-12-May-2017
article (author version)Kumazaki, Yusuke; Yatabe, Zenji; Sato, TaketomoFormation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching-Japanese Journal of Applied Physics (JJAP)-Apr-2016
article (author version)Sato, Taketomo; Kumazaki, Yusuke; Kida, Hirofumi; Watanabe, Akio; Yatabe, Zenji; Matsuda, SoichiroLarge photocurrents in GaN porous structures with a redshift of the photoabsorption edge-Semiconductor science and technology-Jan-2016
article (author version)Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, TamotsuInterface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces-Physica status solidi A applications and materials science-May-2015
articleWatanabe, Akio; Kumazaki, Yusuke; Yatabe, Zenji; Sato, TaketomoFormation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode-ECS Electrochemistry Letters-14-Mar-2015
articleKumazaki, Yusuke; Watanabe, Akio; Yatabe, Zenji; Sato, TaketomoCorrelation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching-Journal of the Electrochemical Society-6-Aug-2014
article (author version)Kumazaki, Yusuke; Kudo, Tomohito; Yatabe, Zenji; Sato, TaketomoInvestigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices-Applied Surface Science-15-Aug-2013
article (author version)Jinbo, Ryohei; Kudo, Tomohito; Yatabe, Zenji; Sato, TaketomoLarge photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure-Thin Solid Films-30-Jun-2012
article (author version)Sato, Taketomo; Yoshizawa, Naoki; Hashizume, TamotsuRealization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells-Thin Solid Films-31-May-2010
articleSato, Taketomo; Mizohata, Akinori; Hashizume, TamotsuElectrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors-Journal of The Electrochemical Society-2010
articleSato, Taketomo; Yoshizawa, Naoki; Okazaki, Hiroyuki; Hashizume, TamotsuLow Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching-ECS Transactions-2010
article (author version)Yoshizawa, Naoki; Sato, Taketomo; Hashizume, TamotsuFundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors-Japanese Journal of Applied Physics-Sep-2009
article (author version)Sato, Taketomo; Mizohata, Akinori; Yoshizawa, Naoki; Hashizume, TamotsuAmperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures-Applied Physics Express-May-2008
articleSato, Taketomo; Mizohata, AkinoriPhotoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures-Electrochemical and Solid-State Letters-20-Feb-2008
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