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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, ToshikiAl2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-15-Jun-2004
article (author version)Sato, Taketomo; Mizohata, Akinori; Yoshizawa, Naoki; Hashizume, TamotsuAmperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures-Applied Physics Express-May-2008
articleKotani, Junji; Hashizume, Tamotsu; Hasegawa, HidekiAnalysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-20-Aug-2004
articleMatys, M.; Stoklas, R.; Kuzmik, J.; Adamowicz, B.; Yatabe, Z.; Hashizume, T.Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures-Journal of Applied Physics-31-May-2016
articleHori, Y.; Yatabe, Z.; Hashizume, T.Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors-Journal of Applied Physics-27-Dec-2013
article (author version)Ogawa, Eri; Hashizume, Tamotsu; Nakazawa, Satoshi; Ueda, Tetsuzo; Tanaka, TsuyoshiChemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-25-Jun-2007
articleHashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, HidekiChemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2001
article (author version)Kotani, Junji; Hasegawa, Hideki; Hashizume, TamotsuComputer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model-Applied Surface Science-15-Oct-2004
articleNishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, TamotsuCurrent linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors-Japanese Journal of Applied Physics (JJAP)-Oct-2017
article (author version)Ohi, Kota; Asubar, Joel Tacla; Nishiguchi, Kenya; Hashizume, TamotsuCurrent Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs-IEEE Transactions on Electron Devices-Oct-2013
theses (doctoral)Hashizume, TamotsuDeep Level Characterization of GaAs and AlGaAs by Capacitance Spectroscopy容量分光法によるGaAsおよびAlGaAsの深い準位の評価--25-Mar-1991
articleMatys, M.; Adamowicz, B.; Hashizume, T.Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement-Applied Physics Letters-3-Dec-2012
articleMatys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T.Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method-Applied Physics Letters-8-Jul-2013
articleHashizume, Tamotsu; Nakasaki, RyusukeDiscrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces-Applied Physics Letters-17-Jul-2002
articleKimura, Takeshi; Hashizume, TamotsuEffect of carbon incorporation on electrical properties of n-type GaN surfaces-Journal of Applied Physics-Jan-2009
articleMiczek, Marcin; Mizue, Chihoko; Hashizume, Tamotsu; Adamowicz, BogusławaEffects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors-Journal of Applied Physics-28-May-2008
articleHashizume, TamotsuEffects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface-Journal of Applied Physics-1-Jul-2003
article (author version)Hashizume, Tamotsu; Hasegawa, HidekiEffects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes-Applied Surface Science-15-Jul-2004
articleHashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, KenyaEffects of postmetallization annealing on interface properties of Al2O3/GaN structures-Applied Physics Express (APEX)-Dec-2018
articleKaneko, M.; Hashizume, T.; Odnoblyudov, V. A.; Tu, C. W.Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy-Journal of Applied Physics-15-May-2007
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