| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article | Asubar, Joel T.; Yatabe, Zenji; Gregusova, Dagmar; Hashizume, Tamotsu | Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation | - | Journal of Applied Physics | - | 28-Mar-2021 |
| article | Ochi, Ryota; Maeda, Erika; Nabatame, Toshihide; Shiozaki, Koji; Sato, Taketomo; Hashizume, Tamotsu | Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor | - | AIP Advances | - | 10-Jun-2020 |
| article | Hashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, Kenya | Effects of postmetallization annealing on interface properties of Al2O3/GaN structures | - | Applied Physics Express (APEX) | - | Dec-2018 |
| article | Hashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, Zenji | State of the art on gate insulation and surface passivation for GaN-based power HEMTs | - | Materials science in semiconductor processing | - | May-2018 |
| article | Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu | Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors | - | Japanese Journal of Applied Physics (JJAP) | - | Oct-2017 |
| article | Kumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, Tamotsu | Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process | - | Journal of Applied Physics | - | 14-May-2017 |
| article | Matys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T. | On the origin of interface states at oxide/III-nitride heterojunction interfaces | - | Journal of Applied Physics | - | 14-Dec-2016 |
| article | Kaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu | Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates | - | Applied physics letters | - | 18-Oct-2016 |
| article | Yatabe, Zenji; Asubar, Joel T; Hashizume, Tamotsu | Insulated gate and surface passivation structures for GaN-based power transistors | - | Journal of Physics D: Applied Physics | - | 7-Sep-2016 |
| article | Matys, M.; Stoklas, R.; Kuzmik, J.; Adamowicz, B.; Yatabe, Z.; Hashizume, T. | Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures | - | Journal of Applied Physics | - | 31-May-2016 |
| article (author version) | Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, Tamotsu | Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces | - | Physica status solidi A applications and materials science | - | May-2015 |
| article | Asubar, Joel T.; Yatabe, Zenji; Hashizume, Tamotsu | Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors | - | Applied Physics Letters | - | 4-Aug-2014 |
| article | Hori, Y.; Yatabe, Z.; Hashizume, T. | Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors | - | Journal of Applied Physics | - | 27-Dec-2013 |
| article (author version) | Ohi, Kota; Asubar, Joel Tacla; Nishiguchi, Kenya; Hashizume, Tamotsu | Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs | - | IEEE Transactions on Electron Devices | - | Oct-2013 |
| article | Matys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T. | Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method | - | Applied Physics Letters | - | 10-Jul-2013 |
| article | Matys, M.; Adamowicz, B.; Hashizume, T. | Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement | - | Applied Physics Letters | - | 3-Dec-2012 |
| article | Yoshida, Toshiyuki; Hashizume, Tamotsu | Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method | - | Applied Physics Letters | - | 17-Sep-2012 |
| article | Hu, Cheng-Yu; Hashizume, Tamotsu | Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress | - | Journal of Applied Physics | - | 15-Apr-2012 |
| article | Sugawara, Katsuya; Kotani, Junji; Hashizume, Tamotsu | Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition | - | Applied Physics Letters | - | 13-Apr-2009 |
| article | Shiozaki, Nanako; Hashizume, Tamotsu | Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution | - | Journal of Applied Physics | - | 15-Mar-2009 |
