Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
article (author version) | Shiratori, Yuta; Kasai, Seiya | Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors | - | Japanese Journal of Applied Physics | - | 25-Apr-2008 |
article (author version) | Tamura, Takahiro; Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu | Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor | - | Applied Physics Express | - | 25-Feb-2008 |
article | Kotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, Tamotsu | Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures | - | Applied Physics Letters | - | 27-Aug-2007 |
article | Kasai, Seiya; Nakamura, Tatsuya; Shiratori, Yuta | Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates | - | Applied Physics Letters | - | 14-May-2007 |
article | Nakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, Tamotsu | Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates | - | Applied Physics Letters | - | Mar-2007 |
article (author version) | Kasai, Seiya; Nakamura, Tatsuya; Shiratori, Yuta | Multiple Path Switching Device Utilizing Size-Controlled Nano-Schottky Wrap Gates for MDD-Based Logic Circuits | - | Journal of Multiple-Valued Logic and Soft Computing | - | 2007 |
article (author version) | Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H. | Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates | - | Journal of Electronic Materials | - | Apr-2006 |
article (author version) | Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu | Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits | - | Journal of Physics: Conference Series | - | 2006 |
article | Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
article | HASEGAWA, Hideki; KASAI, Seiya; SATO, Taketomo | Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs | - | IEICE TRANSACTIONS on Electronics | - | Oct-2004 |
article (author version) | Kasai, Seiya; Han, Weihua; Yumoto, Miki; Hasegawa, Hideki | Teraheltz Response of Schottky Wrap Gate-Controlled Quantum Dots | - | Physica Status Solidi. C. Current Topics in Solid State Physics | - | 26-Jun-2003 |
article (author version) | Kameda, Atsushi; Kasai, Seiya; Sato, Taketomo; Hasegawa, Hideki | Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs | - | Solid-State Electronics | - | Feb-2003 |
article (author version) | Seiya, Kasai; Yumoto, Miki; Hasegawa, Hideki | Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach | - | Solid-State Electronics | - | Feb-2003 |
article | Kasai, S.; Hasegawa, H. | A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon | - | IEEE Electron Device Letters | - | Aug-2002 |
article (author version) | Kasai, Seiya; Hasegawa, Hideki | III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks | - | Applied Surface Science | - | 8-May-2002 |
article (author version) | Yumoto, Miki; Kasai, Seiya; Hasegawa, Hideki | Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates | - | Applied Surface Science | - | 8-May-2002 |
article (author version) | Endo, Makoto; Jin, Zhi; Kasai, Seiya; Hasegawa, Hideki | Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2002 |
article (author version) | Yumoto, Miki; Kasai, Seiya; Hasegawa, Hideki | Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2002 |
article (author version) | Kasai, Seiya; Hasegawa, Hideki | GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture | - | Physica E: Low-dimensional Systems and Nanostructures | - | Mar-2002 |
article (author version) | Hasegawa, Hideki; Kasai, Seiya | Hexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires | - | Physica E: Low-dimensional Systems and Nanostructures | - | Oct-2001 |