HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 21 to 40 of 46
< previous   next >
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleKasai, Seiya; Nakamura, Tatsuya; Shiratori, YutaMultipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates-Applied Physics Letters-14-May-2007
articleNakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, TamotsuFabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates-Applied Physics Letters-Mar-2007
article (author version)Kasai, Seiya; Nakamura, Tatsuya; Shiratori, YutaMultiple Path Switching Device Utilizing Size-Controlled Nano-Schottky Wrap Gates for MDD-Based Logic Circuits-Journal of Multiple-Valued Logic and Soft Computing-2007
article (author version)Kasai, S.; Kotani, J.; Hashizume, T.; Hasegawa, H.Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates-Journal of Electronic Materials-Apr-2006
article (author version)Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, TamotsuProperties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits-Journal of Physics: Conference Series-2006
articleKotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiLateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
articleHASEGAWA, Hideki; KASAI, Seiya; SATO, TaketomoHexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs-IEICE TRANSACTIONS on Electronics-Oct-2004
article (author version)Kasai, Seiya; Han, Weihua; Yumoto, Miki; Hasegawa, HidekiTeraheltz Response of Schottky Wrap Gate-Controlled Quantum Dots-Physica Status Solidi. C. Current Topics in Solid State Physics-26-Jun-2003
article (author version)Kameda, Atsushi; Kasai, Seiya; Sato, Taketomo; Hasegawa, HidekiEffects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs-Solid-State Electronics-Feb-2003
article (author version)Seiya, Kasai; Yumoto, Miki; Hasegawa, HidekiFabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach-Solid-State Electronics-Feb-2003
articleKasai, S.; Hasegawa, H.A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon-IEEE Electron Device Letters-Aug-2002
article (author version)Kasai, Seiya; Hasegawa, HidekiIII-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks-Applied Surface Science-8-May-2002
article (author version)Yumoto, Miki; Kasai, Seiya; Hasegawa, HidekiGraph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates-Applied Surface Science-8-May-2002
article (author version)Endo, Makoto; Jin, Zhi; Kasai, Seiya; Hasegawa, HidekiReactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2002
article (author version)Yumoto, Miki; Kasai, Seiya; Hasegawa, HidekiNovel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2002
article (author version)Kasai, Seiya; Hasegawa, HidekiGaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture-Physica E: Low-dimensional Systems and Nanostructures-Mar-2002
article (author version)Hasegawa, Hideki; Kasai, SeiyaHexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires-Physica E: Low-dimensional Systems and Nanostructures-Oct-2001
articleXIE, Yong-Gui; KASAI, Seiya; TAKAHASHI, Hiroshi; JIANG, Chao; HASEGAWA, HidekiFabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer-IEICE Transactions on Electronics-Oct-2001
articleYong, Gui Xie.; Kasai, S.; Takahashi, H.; Chao, Jiang.; Hasegawa, H.A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance-IEEE Electron Device Letters-Jul-2001
article (author version)Kasai, Seiya; Neguro, Noboru; Hasegawa, HidekiConductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors-Applied Surface Science-15-May-2001
Showing results 21 to 40 of 46
< previous   next >

 

Hokkaido University