| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article (author version) | Hasegawa, Hideki; Kasai, Seiya | Hexagonal Binary Decision Diagram Quantum Logic Circuits Using Schottky In-Plane and Wrap Gate Control of GaAs and InGaAs Nanowires | - | Physica E: Low-dimensional Systems and Nanostructures | - | Oct-2001 |
| article (author version) | Kasai, Seiya; Neguro, Noboru; Hasegawa, Hideki | Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors | - | Applied Surface Science | - | 15-May-2001 |
| article (author version) | Kasai, Seiya; Hasegawa, Hideki | GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Mar-2001 |
| article (author version) | Sato, Taketomo; Kasai, Seiya; Hasegawa, Hideki | Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process | - | Applied Surface Science | - | 2001 |
| article (author version) | Sato, Taketomo; Kasai, Seiya; Okada, Hiroshi; Hasegawa, Hideki | Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Jul-2000 |
| proceedings (author version) | Kasai, Seiya; Amemiya, Yoshihito; Hasegawa, Hideki | GaAs Schottky Wrap-Gate Binary-Decision-Diagram Devices for Realization of Novel Single Electron Logic Architecture | - | - | - | 2000 |
| article (author version) | Kasai, Seiya; Satoh, Yoshihiro; Hasegawa, Hideki | Conductance Oscillation Characteristics of GaAs Schottky Wrap-Gate Single Electron Transistors | - | Physica B: Condensed Matter | - | 1-Dec-1999 |
| article (author version) | Sato, Taketomo; Kaneshiro, Chinami; Okada, Hiroshi; Hasegawa, Hideki | Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-1999 |
| article (author version) | Sato, Taketomo; Kaneshiro, Chinami; Hasegawa, Hideki | The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-1999 |
| article (author version) | Kaneshiro, Chinami; Sato, Taketomo; Hasegawa, Hideki | Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-1999 |
| article (author version) | Kasai, Seiya; Jinushi, Kei-ichiroh; Tomozawa, Hidemasa; Hasegawa, Hideki | Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Mar-1997 |
| article (author version) | Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Dec-1996 |
| article (author version) | Kasai, Seiya; Hasegawa, Hideki | Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Feb-1996 |
| bulletin (article) | 佐々木, 恵二; 赤沢, 正道; 塩原, 俊助; 長谷川, 英機 | 半絶縁性基板の表面電気伝導および表面不活性化 | Electrical Conduction Near Surface of Semi-Insulating Substrate and Its Surface Passivation | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 29-Jul-1994 |
| bulletin (article) | 岸田, 基也; 熊倉, 一英; 中越, 一彰; 山崎, 高宏; 本久, 順一; 福井, 孝志; 長谷川, 英機 | 選択成長によるGaAs及びAlGaAs立体構造の作製と評価 | Fabrication and Characterization of GaAs and AlGaAs Micro-Pyramids by Selective MOCVD | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 29-Jul-1994 |
| bulletin (article) | 岩穴, 忠義; 藤倉, 序章; 長谷川, 英機 | フォトルミネセンス法によるInGaAS細線の評価 | Charactorization of InGaAs Wires by Photoluminescence | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 29-Jul-1994 |
| bulletin (article) | 西本, 陽一郎; 斉藤, 俊也; 長谷川, 英機 | フォトルミネセンス法によるシリコン表面の表面再結合速度の評価 | Measurement of Surface Recombination Velocity of Si Surface by Photoluminescence Method | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 28-May-1993 |
| bulletin (article) | 樋口, 恵一; 後藤, 修; 福井, 孝志; 長谷川, 英機 | 原子層エピタキシ法によるInAs/GaAs量子井戸の形成と評価 | The Fabrication and Properties of InAs/GaAs Quantum Wells by ALE | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 27-May-1992 |
| bulletin (article) | 大植, 英司; 赤沢, 正道; 児玉, 聡; 長谷川, 英機 | シリコン超薄膜を用いたInGaAsの表面不活性化とその応用 | A New Surface Passivation Method of InGaAs Using a Si Ultrathin Layer and Its Application | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 20-Jul-1991 |
| bulletin (article) | 後藤, 修; 樋口, 恵一; 長谷川, 英機 | 原子層エピタキシ法によるInAs，GaAs薄膜の形成と量子井戸および障壁構造の製作 | Atomic Layer Epitaxy Growth of InAs and GaAs Thin Films and Fabrication of Quantum Wells and Barriers | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 24-May-1991 |
