HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >

Sort by: In order: Results/Page Authors/Record:
Export metadata:
Showing results 21 to 40 of 57
< previous   next >
TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleKaneko, M.; Hashizume, T.; Odnoblyudov, V. A.; Tu, C. W.Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy-Journal of Applied Physics-15-May-2007
articleSato, Taketomo; Fujino, Toshiyuki; Hashizume, TamotsuElectrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions-Electrochemical and Solid-State Letters-2007
article (author version)Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiElectron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Dec-1996
articleNakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, TamotsuFabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates-Applied Physics Letters-Mar-2007
article (author version)Shiozaki, Nanako; Sato, Taketomo; Hashizume, TamotsuFormation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water-Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers-Apr-2007
articleOchi, Ryota; Maeda, Erika; Nabatame, Toshihide; Shiozaki, Koji; Sato, Taketomo; Hashizume, TamotsuGate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor-AIP Advances-10-Jun-2020
articleKaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, TamotsuHighly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates-Applied physics letters-18-Oct-2016
articleShiozaki, Nanako; Hashizume, TamotsuImprovements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution-Journal of Applied Physics-15-Mar-2009
articleYatabe, Zenji; Asubar, Joel T; Hashizume, TamotsuInsulated gate and surface passivation structures for GaN-based power transistors-Journal of Physics D: Applied Physics-7-Sep-2016
article (author version)Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, TamotsuInterface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces-Physica status solidi A applications and materials science-May-2015
articleKotani, Junji; Kaneko, Masamitsu; Hasegawa, Hideki; Hashizume, TamotsuLarge reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism-Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures-Jul-2006
articleKotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, HidekiLateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-Jul-2005
articleHashizume, Tamotsu; Kotani, Junji; Hasegawa, HidekiLeakage mechanism in GaN and AlGaN Schottky interfaces-Applied Physics Letters-14-Jul-2004
article (author version)Oyama, Susumu; Hashizume, Tamotsu; Hasegawa, HidekiMechanism of current leakage through metal/n-GaN interfaces-Applied Surface Science-8-May-2002
articleKotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, TamotsuMechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures-Applied Physics Letters-27-Aug-2007
articleHasegawa, Hideki; Inagaki, Takanori; Ootomo, Shinya; Hashizume, TamotsuMechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors-Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures-5-Aug-2003
articleKumakura, K.; Makimoto, T.; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H.Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence-Applied Physics Letters-Jan-2005
bulletin (article)橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機MOCVD成長によるアンドープGaAs中の電子トラップDeep Electron Traps in Undoped GaAs Grown by MOCVD北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-May-1984
articleHashizume, Tamotsu; Saitoh, ToshiyaNatural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy-Applied Physics Letters-16-Apr-2001
articleSugawara, Katsuya; Kotani, Junji; Hashizume, TamotsuNear-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition-Applied Physics Letters-13-Apr-2009
Showing results 21 to 40 of 57
< previous   next >


Hokkaido University