| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article | Kaneko, M.; Hashizume, T.; Odnoblyudov, V. A.; Tu, C. W. | Electrical and deep-level characterization of GaP xNx grown by gas-source molecular beam epitaxy | - | Journal of Applied Physics | - | 15-May-2007 |
| article | Sato, Taketomo; Fujino, Toshiyuki; Hashizume, Tamotsu | Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions | - | Electrochemical and Solid-State Letters | - | 2007 |
| article (author version) | Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Dec-1996 |
| article | Nakamura, Tatsuya; Kasai, Seiya; Shiratori, Yuta; Hashizume, Tamotsu | Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates | - | Applied Physics Letters | - | Mar-2007 |
| article (author version) | Shiozaki, Nanako; Sato, Taketomo; Hashizume, Tamotsu | Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers | - | Apr-2007 |
| article | Ochi, Ryota; Maeda, Erika; Nabatame, Toshihide; Shiozaki, Koji; Sato, Taketomo; Hashizume, Tamotsu | Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor | - | AIP Advances | - | 10-Jun-2020 |
| article | Kaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu | Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates | - | Applied physics letters | - | 18-Oct-2016 |
| article | Shiozaki, Nanako; Hashizume, Tamotsu | Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution | - | Journal of Applied Physics | - | 15-Mar-2009 |
| article | Yatabe, Zenji; Asubar, Joel T; Hashizume, Tamotsu | Insulated gate and surface passivation structures for GaN-based power transistors | - | Journal of Physics D: Applied Physics | - | 7-Sep-2016 |
| article (author version) | Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, Tamotsu | Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces | - | Physica status solidi A applications and materials science | - | May-2015 |
| article | Kotani, Junji; Kaneko, Masamitsu; Hasegawa, Hideki; Hashizume, Tamotsu | Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | Jul-2006 |
| article | Kotani, Junji; Kasai, Seiya; Hashizume, Tamotsu; Hasegawa, Hideki | Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
| article | Hashizume, Tamotsu; Kotani, Junji; Hasegawa, Hideki | Leakage mechanism in GaN and AlGaN Schottky interfaces | - | Applied Physics Letters | - | 14-Jul-2004 |
| article (author version) | Oyama, Susumu; Hashizume, Tamotsu; Hasegawa, Hideki | Mechanism of current leakage through metal/n-GaN interfaces | - | Applied Surface Science | - | 8-May-2002 |
| article | Kotani, Junji; Tajima, Masafumi; Kasai, Seiya; Hashizume, Tamotsu | Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures | - | Applied Physics Letters | - | 27-Aug-2007 |
| article | Hasegawa, Hideki; Inagaki, Takanori; Ootomo, Shinya; Hashizume, Tamotsu | Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | 5-Aug-2003 |
| article | Kumakura, K.; Makimoto, T.; Kobayashi, N.; Hashizume, T.; Fukui, T.; Hasegawa, H. | Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence | - | Applied Physics Letters | - | Jan-2005 |
| bulletin (article) | 橋詰, 保; 池田, 英治; 赤津, 祐史; 大野, 英男; 長谷川, 英機 | MOCVD成長によるアンドープGaAs中の電子トラップ | Deep Electron Traps in Undoped GaAs Grown by MOCVD | 北海道大學工學部研究報告 | Bulletin of the Faculty of Engineering, Hokkaido University | 31-May-1984 |
| article | Hashizume, Tamotsu; Saitoh, Toshiya | Natural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy | - | Applied Physics Letters | - | 16-Apr-2001 |
| article | Sugawara, Katsuya; Kotani, Junji; Hashizume, Tamotsu | Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition | - | Applied Physics Letters | - | 13-Apr-2009 |
