| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date |
| article (author version) | Yoshizawa, Naoki; Sato, Taketomo; Hashizume, Tamotsu | Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors | - | Japanese Journal of Applied Physics | - | Sep-2009 |
| article | Ochi, Ryota; Maeda, Erika; Nabatame, Toshihide; Shiozaki, Koji; Sato, Taketomo; Hashizume, Tamotsu | Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor | - | AIP Advances | - | 10-Jun-2020 |
| article | Sato, Taketomo; Tamai, Isao; Hasegawa, Hideki | Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates | - | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | - | Jul-2005 |
| article (author version) | Sato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki | Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates | - | Japanese Journal of Applied Physics. Pt. 1, Regular papers, brief communications & review papers | - | Apr-2005 |
| article | HASEGAWA, Hideki; KASAI, Seiya; SATO, Taketomo | Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs | - | IEICE TRANSACTIONS on Electronics | - | Oct-2004 |
| article (author version) | Yatabe, Zenji; Asubar, Joel T.; Sato, Taketomo; Hashizume, Tamotsu | Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces | - | Physica status solidi A applications and materials science | - | May-2015 |
| article (author version) | Kumazaki, Yusuke; Kudo, Tomohito; Yatabe, Zenji; Sato, Taketomo | Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices | - | Applied Surface Science | - | 15-Aug-2013 |
| article (author version) | Jinbo, Ryohei; Kudo, Tomohito; Yatabe, Zenji; Sato, Taketomo | Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure | - | Thin Solid Films | - | 30-Jun-2012 |
| article (author version) | Sato, Taketomo; Kumazaki, Yusuke; Kida, Hirofumi; Watanabe, Akio; Yatabe, Zenji; Matsuda, Soichiro | Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge | - | Semiconductor science and technology | - | Jan-2016 |
| article | Kokawa, Takuya; Sato, Taketomo; Hasegawa, Hideki; Hashizume, Tamotsu | Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | 25-Jul-2006 |
| article | Sato, Taketomo; Yoshizawa, Naoki; Okazaki, Hiroyuki; Hashizume, Tamotsu | Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching | - | ECS Transactions | - | 2010 |
| article (author version) | Sato, Taketomo; Toguchi, Masachika; Komatsu, Yuto; Uemura, Keisuke | Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions | - | IEEE transactions on semiconductor manufacturing | - | Nov-2019 |
| article | Sato, Taketomo; Mizohata, Akinori | Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures | - | Electrochemical and Solid-State Letters | - | 20-Feb-2008 |
| article (author version) | Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo | Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices | - | IEEE transactions on semiconductor manufacturing | - | Nov-2019 |
| article | Kumazaki, Yusuke; Matsumoto, Satoru; Sato, Taketomo | Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications | - | Journal of The Electrochemical Society | - | 12-May-2017 |
| article | Kumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, Tamotsu | Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process | - | Journal of Applied Physics | - | 14-May-2017 |
| article (author version) | Shiozaki, Nanako; Sato, Taketomo; Akazawa, Masamichi; Hasegawa, Hideki | Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices | - | Journal de Physique IV | - | Mar-2006 |
| article (author version) | Sato, Taketomo; Yoshizawa, Naoki; Hashizume, Tamotsu | Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells | - | Thin Solid Films | - | 31-May-2010 |
| article | Sato, Taketomo; Oikawa, Takeshi; Hasegawa, Hideki; Hashizume, Tamotsu | Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism | - | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures | - | 26-Jul-2006 |
| article (author version) | Sato, Taketomo; Fujino, Toshiyuki; Hasegawa, Hideki | Self-assembled formation of uniform InP nanopore arrays by electrochemical anodization in HCl based electrolyte | - | Applied Surface Science | - | 30-May-2006 |
